SOPHIA ANTIPOLIS, France – November 12, 2024 │ The report for Q3 2024 GaN Patent Monitor is now available online. With our monitoring service, KnowMade enables you to stay informed about GaN-related patent activities in power electronics. You can benefit from updates on new patent applications, recently granted patents, expired or abandoned patents, recent patent transfers, patent litigations, and oppositions.
Figure 1: Ranking of main patent assignees according to the number of inventions published during the third quarter of 2024.
Key points of GaN-related IP activities
Through our diligent surveillance of intellectual property (IP) activities within the gallium nitride (GaN) sector for RF and power electronics, we observed the following developments in the last quarter (Q3 2024). Over 530 new patent families were published, and more than 310 inventions were patented for the first time.
New patent families include several patent co-filings, resulting mainly from IP collaborations between Chinese companies (e.g., China Resources, Silan, Maxscend) and Chinese research organizations (including Southeast University, Tsinghua University, SUSTech). A specific focus on the situation in China is included in our analysis.
What’s more, we identified over 20 entities, such as Lucid Microsystems, RFPT, Rivian, and Schweizer Electronic, that published their first GaN-related patents during this period, and we intend to closely monitor their activities. Additionally, this Q3 2024 report offers an in-depth analysis of the patenting activities of Innoscience, Infineon, Rohm, STMicroelectronics, and Wolfspeed.
Notable new inventions across the GaN supply chain
Across the four divisions of the supply chain, several noteworthy new inventions have emerged.
In wafers and epiwafers segment, two patent publications involve diamond integration: M7D Corporation developed GaN-on-diamond epiwafer using a monocrystalline diamond substrate and a BeO layer thereon, while the US Air Force managed a BN layer transfer onto diamond substrate to produce heterostructures having improved mechanical and heat transfer properties. We contributed to the June issue of Microwave Journal on this subject, discussing the Patent activity surrounding GaN and Diamond integration.
In the device segment, there is continued innovation in E-mode technology. EPC has developed two E-mode GaN devices: the first featuring a hole elimination electrode, and the second incorporating a barrier offset layer and an overlying multi-region field plate achieving more uniform electric field. Additionally, Samsung is developing an E-mode GaN HEMT including an n-type interfacial layer between the p-GaN and the gate electrode, to reduce forward gate leakage current.
Within the packaging and modules category, an invention from Intel involves packages utilizing devices within a SiC layer coupled with devices within a GaN layer proximate to the SiC to convert a high voltage source to a reduced voltage range of 1-1.8 V for use by components within the package. GaN Systems, recently acquired by Infineon, also contributed to this segment this quarter, looking to improve thermal dissipation and electromagnetic compatibility of GaN transistors in embedded die packages.
Finally, in circuits and applications, Renault Group has been attributed with an invention describing a battery inversion-protected electric power conversion stage comprising GaN FETs. The development of GaN power IC is going on, as attested by several patent publications from Cambridge GaN devices and EPC for instance. Interestingly, several inventions also relate to GaN cascode devices, published by companies such as Transphorm (recently acquired by Renesas) or Power Integrations.
Each invention is thoroughly explored in our Q3 2024 issue of the GaN Electronics Monitor, both in the accompanying report and the comprehensive database.
All you can get from our patent monitoring service
Our GaN quarterly patent monitoring service diligently tracks the evolution of the patent landscape by monitoring new inventions, newly granted patents, intellectual property collaborations, and abandoned or expired patents across various IP stakeholders and technologies. It also provides valuable insights into companies’ recent technological advancements and research and development strategies, with a particular emphasis on identifying emerging trends. This knowledge is instrumental in understanding competitors’ R&D trajectories and strategies, assessing potential risks, and identifying business opportunities.
This monitoring service provides a quarterly-updated Excel database containing comprehensive patent data, including pending patent applications, granted patents, abandoned patents, and IP rights transfers. Additionally, quarterly analytical reports accompany the database, featuring graphs and commentary on patent landscape changes, with a focus on key IP stakeholders, emerging entrants, and technological innovations. Subscribers also have the advantage of direct access to our analysts, facilitating on-demand Q&A sessions and discussions on trends, analyses, specific patented technologies, or companies’ patent portfolios in the GaN power electronics sector.
The GaN Quarterly Patent Monitor subscription is available at any time directly from our website. For further information, please contact us at contact@knowmade.fr or via our contact forms.
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KnowMade is a technology intelligence and IP strategy consulting company specialized in analyzing patents and scientific publications. The company helps innovative companies, investors, and R&D organizations to understand competitive landscape, follow technological evolutions, reduce uncertainties, and identify opportunities and risks in terms of technology and intellectual property.