Aledia benefits from a strong patent portfolio on GaN-on-Silicon nanowire LEDs to address the LED display market

SOPHIA ANTIPOLIS, France – September 14, 2020 | Aledia was spun off from Cea-Leti in 2011 to develop a disruptive 3D LED technology based on the standard 200-mm Si platform, which would shrink the cost per chip in comparison with the conventional 2D LED technology. Earlier this year, the startup announced its plan to build[…]

Allos Semiconductors moving away from power electronics and transferring its patents & know-how to a new entrant in GaN-on-Si technology

SOPHIA ANTIPOLIS, France – July 22, 2020 | On July 8th, 2020, Allos Semiconductors disclosed a deal with Azur Space, a company specializing in the development and production of multi-junction solar cells, to sell its GaN RF and power electronics business, in a view to focus on its GaN-on-Si micro LED epiwafer technology for up[…]

Why does II-VI rely on General Electric’s IP to conquer the power SiC markets?

SOPHIA ANTIPOLIS, France – July 07, 2020 | As announced earlier this month, optical component and materials maker II-VI has licensed Silicon Carbide (SiC) technology from General Electric with a view to move into power devices and modules. Just like Cree/Wolfspeed and Rohm Group Company (including SiCrystal), the main competitors of II-VI on the SiC wafer[…]

TSMC’s GaN-on-Silicon patents supporting STMicroelectronics’ strategic move towards power GaN adoption in automotive applications

SOPHIA ANTIPOLIS, France – February 24, 2020 | As announced earlier this month, STMicroelectronics (ST) will collaborate with Taiwan Semiconductor Manufacturing Corporation (TSMC) in order to accelerate the development of GaN technology for power applications, and more specifically for automotive applications (converters and chargers for hybrid and electric vehicles). With this recent manufacturing partnership, STMicroelectronics[…]