SOPHIA ANTIPOLIS, France – July 30, 2024 │ GaN electronic devices, especially GaN-based high electron mobility transistors (HEMT), are increasingly used in RF and power conversion applications. Yet in the most demanding applications, GaN device performance and reliability may be limited by thermal considerations such as the channel temperature. Some forms of enriched monocrystalline synthetic[…]
SOPHIA ANTIPOLIS, France – April 25, 2024 │Get an update on the Power GaN patent landscape with Dr. Rémi Comyn. He gave an online lecture, and you can find a report and the materials he posted here. Webinar video recording About the subject Since 2019, KnowMade has been researching and monitoring the intellectual property (IP)[…]
SOPHIA ANTIPOLIS, France – December 18, 2023 │ The GaN newsletter for December 2023 is now available! This monthly newsletter allows you to keep up to date on the latest scientific publications, patent applications, and news related to III-Nitride semiconductors (GaN, AlN, InN, and alloys) for optoelectronic and electronic applications (power, RF, LED, laser, photonics,[…]
SOPHIA ANTIPOLIS, France – December 5, 2023 │ Knowmade is releasing a new GaN intellectual property (IP) report providing a deep dive into the power GaN and RF GaN electronics patents worldwide. In this report, both power GaN and RF GaN patent landscapes have been analyzed in a view to describe the global IP competition[…]