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Next-generation power devices: Status of the IP competition for vertical GaN power devices

SOPHIA ANTIPOLIS, France – November 29, 2023 │ Gallium nitride (GaN) power devices were successfully adopted in several power applications, starting with lateral GaN devices. Following the release of its new GaN electronics IP report, KnowMade discusses the status of vertical GaN device technology in the power GaN patent landscape. With the potential to overcome[…]

Q3 2023 GaN electronics patent monitor report: GaNcool, a new pure player joining power GaN competition

SOPHIA ANTIPOLIS, France – November 16, 2023 │ The quarterly report for Q3 2023 GaN Electronics patent monitor is now available. This monitoring service allows you to keep up to date on GaN-related patent activity for RF & Power electronics: new patent publications, newly granted patents, patents expired or abandoned, latest patent transfers and patent[…]

October 2023 GaN newsletter: Qromis Substrate Technology (QST) for power GaN and RF GaN devices

SOPHIA ANTIPOLIS, France – October 27, 2023 │The GaN newsletter for October 2023 is now available! This monthly newsletter allows you to keep up to date on the latest scientific publications, patent applications, and news related to III-Nitride semiconductors (GaN, AlN, InN, and alloys) for optoelectronic and electronic applications (power, RF, LED, laser, photonics, and[…]